SOT -23

3

1

2

Gate

Source

Drain

N-CHANNEL POWER MOSFET

DEVICE MARKING AND ORDERING INFORMATION

FTK123LT1G

SA

3000/Tape&Reel

FTK123LT3G

SA

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

100

Vdc

Gate–Source Voltage

– Continuous

≤ 50µs)

±20

±40

Vdc

Vpk

Drain Current

Continuous (Note 1.)

Pulsed (Note 2.)

0.17

0.68

Adc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5

Board (Note 3.)

Derate above 25 C

225

1.8

mW

mW/ C

Thermal Resistance, Junction to

Ambient

556

C/W

Junction and Storage Temperature

–55 to +150

C

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Wid

th ≤ 300µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 X 0.75 X 0.062 in.

Device

Marking

Shipping

1

3

2

2007. 12. 18

1/4

SEMICONDUCTOR

TECHNICAL DATA

FTK123

Revision No : 0