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FTK1013 Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK1013 Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 6 page ![]() 2014. 01. 13 2/6 Revision No : 0 FTK1013 Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 A –0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 4.5 V 1 2 A VDS = –16 V, VGS = 0 V –0.3 –100 nA Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V, TJ = 85 C –5 A On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V –700 mA VGS = –4.5 V, ID = –350 mA 0.8 1.2 Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –300 m A 1.2 1.6 DS(on) VGS = –1.8 V, ID = –10 m A 1.8 2.7 Forward Transconductancea gfs VDS = –10 V, ID = –250 mA 0.4 S Diode Forward Voltagea VSD IS = –150 mA, VGS = 0 V –0.8 –1.2 V Dynamicb Total Gate Charge Qg 1500 Gate-Source Charge Qgs VDS = –10 V, VGS = –4.5 V, ID = –250 mA 150 pC Gate-Drain Charge Qgd 450 Turn-On Delay Time td(on) 5 Rise Time tr VDD = –10 V, RL = 47 9 Turn-Off Delay Time td(off) VDD = –10 V, RL = 47 ID –200 mA, VGEN = –4.5 V, RG = 10 35 ns Fall Time tf 11 Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. |
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