FTK3018 datasheet(4/5 Pages) FS

Part #	FTK3018

Description	Silicon N-channel MOSFET 100mA, 30V

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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4 / 5 page

2014. 04. 28

4/5

FTK3018

Revision No : 0

200m

SOURCE-DRAIN VOLTAGE : VSD (V)

1.5

0.5

100m

50m

20m

10m

0.5m

0.2m

0.1m

Ta=25°C

Pulsed

VGS=4V

Fig.10 Reverse drain current vs.

source-drain voltage ( ΙΙ )

0.1

DRAIN-SOURCE VOLTAGE : VDS (V)

0 5

0.2

0 5

10 20

Fig.11 Typical capacitance vs.

drain-source voltage

Ciss

Coss

Crss

Ta=25°C

f=1MHZ

VGS=0V

0.1

500

DRAIN CURRENT : ID (mA)

0.2

0.5 1

10 20 50

100

200

1000

100

Fig.12 Switching characteristics

(See Figures 13 and 14 for

the measurement circuit

and resultant waveforms)

Ta=25°C

VDD=5V

VGS=5V

RG=10Ω

Pulsed

td(off)

td(on)

Switching characteristics measurement circuit

Fig.13 Switching time measurement circuit

VGS

VDS

D.U.T.

VDD

90%

50%

10%

90%

10%

50%

Pulse width

10%

VGS

VDS

90%

toff

td(off)

ton

td(on)

Fig.14 Switching time waveforms

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