P0804BVG datasheet(4/9 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

VSD - Source-to-Drain Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

TJ = 150 °C

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

VGS - Gate-to-Source Voltage (V)

0.000

0.005

0.010

0.015

0.020

0.025

0.030

02468

125 °C

25 °C

ID = 12.4 A

Time (s)

600

0.1

0.001

100

0.01

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

10 s

Limited byRDS(on)*

1ms

BVDSS

Limited

100 µs

10 ms

100 ms

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P0804BVG

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