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P0804BVG Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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P0804BVG Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page  N-Channel 40-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Synchronous Rectification • POL, IBC - Secondary Side PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) 40 0.012 at VGS = 10 V 12 15 nC 0.012 at VGS = 4.5 V 9 D S D D G D SO-8 5 6 7 8 Top View 2 3 4 1 S S N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 12 A TC = 70 °C 8 TA = 25 °C 12.4a, b TA = 70 °C 8.8a, b Pulsed Drain Current IDM 50 Avalanche Current L = 0.1 mH IAS 15 Avalanche Energy EAS 11 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 5 A TA = 25 °C 2.1a, b Maximum Power Dissipation TC = 25 °C PD 6 W TC = 70 °C 3.8 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 37 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw P0804BVG 1 |
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