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FTK0102 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK0102 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 6 page  N-Channel Enhancement Mode Power MOSFET Description The FTK0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 2A RDS(ON) <240m Ω @ VGS=10V (Typ:210mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply D G S Schematic diagram Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0102 FTK0102 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25 unless otherwise noted) t i n U t i m i L l o b m y S r e t e m a r a P Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 2 A Drain Current-Pulsed (Note 1) IDM 5 A Maximum Power Dissipation PD 1.25 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250 μA 100 110 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA SEMICONDUCTOR TECHNICAL DATA FTK0102 2018. 05. 29 1/6 Revision No : 0 |
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