FTK1206 datasheet(2/5 Pages) FS

2 / 5 page

2014.10. 10

2/5

FTK1206

Revision No : 0

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-12

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.5

-0.9

Gate-source leakage

IGSS

VDS =0V, VGS =±8V

±100

Zero gate voltage drain current

IDSS

VDS =-8V, VGS =0V

-1

µA

VGS =-4.5V, ID =-3.5A

VGS =-2.5V, ID =-3A

Drain-source on-state resistance

RDS(on)

VGS =-1.8V,ID=-2.0A

Ω

Forward transconductancea

gfs

VDS =-5V, ID =-4.1A

Dynamic

Input capacitanceb,c

Ciss

740

Output capacitanceb,c

Coss

290

Reverse transfer capacitanceb,c

Crss

VDS =-4V,VGS =0V,f =1MHz

190

VDS =-4V,VGS =-4.5V,

ID =-4.1A

7.8

Total gate chargeb

4.5

Gate-source chargeb

Qgs

1.2

Gate-drain chargeb

Qgd

VDS =-4V,VGS =-2.5V,

ID =-4.1A

1.6

Gate resistanceb,c

f =1MHz

1.4

Ω

Turn-on delay timeb,c

td(on)

Rise timeb,c

Turn-off Delay timeb,c

td(off)

Fall timeb,c

VDD=-4V,

RL=1.2Ω, ID ≈-3.3A,

VGEN=-4.5V,Rg=1Ω

Turn-on delay timeb,c

td(on)

Rise timeb,c

Turn-off delay timeb,c

td(off)

Fall timeb,c

VDD=-4V,

RL=1.2Ω, ID ≈-3.3A,

VGEN=-8V,Rg=1Ω

Drain-source body diode characteristics

Continuous source-drain diode current

-6

Pulse diode forward currenta

ISM

-20

Body ciode voltage

VSD

IF=-3.3A

-1.2

Note :

a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.

b. Guaranteed by design, not subject to production testing.

c. These parameters have no way to verify.

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