FTK1208 datasheet(1/5 Pages) FS

Part #	FTK1208

Description	P-Channel MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 5 page

2014. 10. 10

1/5

SEMICONDUCTOR

TECHNICAL DATA

FTK1208

Revision No : 0

P-Channel MOSFET

FEATURE

MARKING:

Equivalent Circuit

DFNWB2

2-6L-J

ABSOLUTE MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

U

nit

Drain-Source Voltage

VDS

-12

Gate-Source Voltage

VGS

±8

V

Drain Current-Continuous

ID

-8

Drain Current-Pulsed

IDM

-28

A

Thermal Resistance from Junction to Ambient

RθJA

357

℃/W

Junction Temperature

Tj

0

5

1

Storage Temperature

TSTG

-55 ~+150

℃

*Repetitive rating：Pluse width limited by junction temperature.

*

APPLICATION



PWM application



Load switch



Battery charge in cellular handset



Advanced trench MOSFET process technology



Ultra low on-resistance with low gate charge

V(BR)DSS

RDS(on) MAX

ID

-12V

28m

Ω@-4.5V

-8A

32m

Ω@-3.7V

40m

Ω@-2.5V

63m

Ω@-1.8V

150m

Ω@-1.5V

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FTK1208 Datasheet(PDF) 1 Page - First Silicon Co., Ltd

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