FTK1208 datasheet(2/5 Pages) FS

2 / 5 page

2014.10. 10

2/5

FTK1208

Revision No : 0

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-12

Zero gate voltage drain current

IDSS

VDS =-12V,VGS = 0V

-1

µA

Gate-body leakage current

IGSS

VGS =±8V, VDS = 0V

±0.1

µA

Gate threshold voltage (note 1)

VGS(th)

VDS =VGS, ID =-250µA

-0.4

-1

VGS =-4.5V, ID =-5A

VGS =-3.7V, ID =-4.6A

VGS =-2.5V, ID =-4.3A

VGS =-1.8V, ID =-1A

Drain-source on-resistance (note 1)

RDS(on)

VGS =-1.5V, ID =-0.5A

150

mΩ

Forward tranconductance (note 1)

gFS

VDS =-5V, ID =-5A

Dynamic

characteristics (note 2)

Input Capacitance

Ciss

1275

Output Capacitance

Coss

255

Reverse Transfer Capacitance

Crss

VDS =-6V,VGS =0V,f =1MHz

236

Gate resistance

f =1MHz

1.9

Ω

Total Gate Charge

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

VDS =-6V,VGS =-4.5V,ID=-5A

3.6

Turn-on delay time

td(on)

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

VDD=-6V,VGEN=-4.5V,ID=-4A

RL=6Ω,RGEN=1Ω

Source-Drain Diode characteristics

Diode forward current

-8

Diode pulsed forward current

ISM

-28

Diode Forward voltage (note 1)

VDS

VGS =0V, IS=-4A

-1.2

Diode reverse recovery time (note 2)

trr

Diode reverse recovery charge (note 2)

Qrr

IF=-4A

,dI/dt=100A/µs

Notes :

1. Pulse test; pulse width≤300μs, duty cycle≤2%.

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