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FTK1480 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK1480 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  G D S SOT–323 20V P-Channel Enhancement-Mode MOSFET 1 3 2 2019. 11. 07 1/5 SEMICONDUCTOR TECHNICAL DATA FTK1480 Revision No : 1 1 3 2 Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8.0 V Continuous Drain Current ID 4 . 1 - Pulsed Drain Current (tp I ) s µ 0 1 = DM -3.0 A Power Dissipation (Note 1) PD W 9 2 . 0 Thermal Resistance from Junction to Ambient RθJA 3 4 1 ℃/W Junction Temperature TJ 0 5 1 Storage Temperature Tstg -50 ~+150 ℃ 1. FEATURES ● V(BR)DSS=-20V RDS(O N)≤255mΩ@VGS =-4.5V,ID=-1.0A RDS(O N)≤355mΩ@VGS =-2.5V,ID=-0.5A ● We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC 3. DEVICE MARKING AND RESISTOR VALUES Shipping 3000/Tape&Reel Device Marking FTK1480 W14 4. MAXIMUM RATINGS(Ta = 25ºC) Note 1. FR–4 @ Minimum Pad. |
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