FTK1480 datasheet(2/5 Pages) FS

2 / 5 page

2019. 11. 07

2/5

FTK1480

Revision No : 1

5. ELECTRICAL CHARACTERISTICS (Ta= 25℃)

OFF CHARACTERISTICS

Characteristic

Drain-Source Voltage

(ID =-250µA, VGS =0V)

Zero Gate Voltage Drain Current

(VDS = -16V, VGS =0V)

Gate-body Leakage Current

(VDS =0V, VGS =±8V)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS =VGS , ID =-250µA)

Static Drain-Source On resistance

(VGS = -4.5V,ID= -1.0A )

(VGS = -2.5V,ID= -0.5A )

(VGS = -1.8V,ID= -0.3A )

Dynamic

Transconductance

(VDS = -10V, ID = -1A )

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

(VDS =0V, VGS =0V, f=1MHz )

Switching

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Source Drain Diode

Diode Forward Voltage

(IS = -1A, VGS =0V)

Maximum Body-diode Continuous Current

Body-diode Reverse Recovery Time

(Is = -1.0A, di/dt=100A/µs)

Body-diode Reverse Recovery Charge

(Is = -1.0A, di/dt=100A/µs)

VSD

trr

Qrr

-0.79

-1.2

-1

(VGS = -4.5V,

ID = -1.2A, VDS

= -10V)

6.5

Qgs

0.3

Qgd

0.7

mΩ

gFS

110

255

150

355

190

Ciss

Coss

Crss

480

405

µA

Symbol

(VDS = -10V,

VGS =0V,

f=1MHz)

(VGS = -4.5V,

VDS = -10V,

ID = -1.2A,

RGEN =6

)

tD(on)

tD(off)

-0.4

-0.6

IDSS

-1

Typ.

Max.

Unit

V(BR)DSS

-20

Min.

RDS(ON)

IGSS

±100

VGS(th)

-1.0

FTK1480 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

FTK1480 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4 5

Datasheet Download

Link URL