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T835H-8G Datasheet(PDF) 5 Page - STMicroelectronics

Part # T835H-8G
Description  8 A - 800 V - 150 °C 8H Triac in D2PAK
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T835H-8G Datasheet(HTML) 5 Page - STMicroelectronics

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Figure 7. Thermal resistance junction to ambient versus
copper surface under tab
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
SCu(cm²)
Rth(j-a) (°C/W)
D²PAK
Epoxy printed circuit board FR4, e
Cu = 35 µm
Figure 8. Relative variation of leakage current versus
junction temperature for different values of blocking
voltage
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25
50
75
100
125
150
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V]
Tj(°C)
VD = VR = 600 V
VD = VR = 800 V
Figure 9. Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
0
0.5
1
1.5
2
-50
-25
0
25
50
75
100
125
150
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]
Tj (°C)
IGT Q3
VGT
IGT Q1-Q2
Figure 10. Relative variation of holding current and
latching current versus junction temperature (typical
values)
0
0.4
0.8
1.2
1.6
-50
-25
0
25
50
75
100
125
150
IH,IL [Tj] / IH,IL [Tj = 25 °C]
Tj (°C)
IL
IH
Figure 11. Surge peak on-state current versus number of
cycles
0
10
20
30
40
50
60
70
80
90
1
10
100
1000
ITSM(A)
Number of cycles
Repetitive
Tc = 139°C
Non repetitive
Tj initial = 25 °C
t =20ms
One cycle
Figure 12. Non repetitive surge peak on-state current for a
sinusoidal pulse with width tp < 10 ms
10
100
1000
0.01
0.10
1.00
10.00
360°
α
Tj initial = 25 °C
I
TSM
ITSM(A)
dl/dt limitation: 100 A/µs
t
p
(ms)
T835H-8G
Characteristics (curves)
DS13570 - Rev 2
page 5/12



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