T835H-8G datasheet(2/12 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

Tc = 139 °C

ITSM

Non repetitive surge peak on-state current (full cycle,

Tj initial = 25 °C)

t = 16.7 ms

t = 20 ms

I2t

I2t value for fusing

tp = 10 ms

A2s

dl/dt

Critical rate of rise of on-state current, IG = 2 x IGT, tr

≤ 100 ns, f = 100 Hz

Tj = 25 °C

100

A/µs

VDRM/VRRM

Repetitive peak off-state voltage

800

VDSM/VRSM

Non Repetitive peak off-state voltage

tp = 10 ms, Tj = 25 °C

900

IGM

Peak gate current

tp = 20 µs, Tj = 150 °C

PGM

Maximum gate power dissipation

PG(AV)

Average gate power dissipation

Tj = 150 °C

Tstg

Storage temperature range

-40 to +150

°C

Operating junction temperature range

-40 to +150

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrants

Value

Unit

IGT

VD = 12 V, RL = 30 Ω

I - II - III

Min.

Max.

VGT

VD = 12 V, RL = 30 Ω

I - II - III

Max.

1.3

VGD

VD = VDRM, RL = 3.3 kΩ

Tj = 150 °C

I - II - III

Min.

0.15

IG = 1.2 x IGT

I - III

Max.

IH (1)

IT = 500 mA, gate open

Max.

dV/dt (1)

VD = VR = 536 V, gate open

Tj = 150 °C

Min.

2000

V/µs

(dl/dt)c (1)

Without snubber network

Tj = 150 °C

Min.

A/ms

1. For both polarities of A2 referenced to A1.

T835H-8G

Characteristics

DS13570 - Rev 2

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