RFD8P06TM datasheet(2/7 Pages) VBSEMI

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Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 60

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 5.2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

- 2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

- 1

µA

VDS = - 60 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS =-5 V, VGS = - 10 V

- 120

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 30 A

0.066



VGS = - 4.5 V, ID = - 20 A

0.080

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 50 A

Dynamicb

Input Capacitance

Ciss

VDS = - 25 V, VGS = 0 V, f = 1 MHz

1200

Output Capacitance

Coss

200

Reverse Transfer Capacitance

Crss

150

Total Gate Charge

VDS = - 30 V, VGS = - 10 V, ID = - 55 A

VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

f = 1 MHz

5.2



Turn-On Delay Time

td(on)

VDD = - 2 V, RL = 2 

ID  - 10 A, VGEN = - 10 V, Rg = 1 

Rise Time

715

Turn-Off Delay Time

td(off)

110

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

- 6

Pulse Diode Forward Currenta

ISM

- 150

Body Diode Voltage

VSD

IS = - 30 A

- 1

- 1.5

Body Diode Reverse Recovery Time

trr

IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

120

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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RFD8P06TM

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