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2SB930 Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part # 2SB930
Description  Silicon PNP epitaxial planar type(For power amplification)
PDF  2 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SB930 Datasheet(HTML) 2 Page - Panasonic Semiconductor

  2SB930 Datasheet HTML 1Page - Panasonic Semiconductor 2SB930 Datasheet HTML 2Page - Panasonic Semiconductor  
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2
Power Transistors
2SB930, 2SB930A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
5
45
35
25
15
(1) T
C=Ta
(2) With a 50
× 50 × 2mm
Al heat sink
(3) Without heat sink
(P
C=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (˚C)
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C=25˚C
–100mA
–80mA
–60mA
–40mA
–20mA
–10mA
–8mA
–5mA
I
B=–120mA
Collector to emitter voltage V
CE
(V)
0
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–10
–8
–6
–4
–2
T
C=100˚C
–25˚C
25˚C
V
CE=–4V
Base to emitter voltage V
BE
(V)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=10
25˚C
T
C=100˚C
–25˚C
Collector current I
C
(A)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–4V
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–5V
f=1MHz
T
C=25˚C
Collector current I
C
(A)
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
Non repetitive pulse
T
C=25˚C
10ms
t=1ms
I
CP
I
C
300ms
Collector to emitter voltage V
CE
(V)
10–4
10
10–3
10–1
10–2
1103
102
104
10–2
10–1
1
10
103
102
(1)
(2)
(1) Without heat sink
(2) With a 50
× 50 × 2mm Al heat sink
Time t (s)



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