2018. 04. 02

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SEMICONDUCTOR

TECHNICAL DATA

FTK55P30D

Revision No : 2

FTK55P30D

P-Channel Power MOSFET

D-PAK (TO-252)

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6 50 ± 0 2

5 60 ± 0 2

5 20 ± 0 2

1 50 ± 0 2

2 70 ± 0 2

2 30 ± 0 1

1 00 MAX

2 30 ± 0 2

0 5 ± 0 1

0 50 ± 0 10

E

1 6 ± 0 2

O

A

C

I

J

H

F

F

L

1

2

3

1 GATE

2 DRAIN

3 SOURCE

0 95 MAX

Q

DESCRIPTION

The FTK55P30D uses advanced trench technology and design to

This device is well suited for high current load applications.

FEATURES

High density cell design for ultra low

Fully characterized Avalanche voltage and current

Excellent package for good heat dissipation

APPLICATIONS

Power switching application

Hard switched and high frequency circuits

Uninterruptible Power Supply

EQUIVALENT CIRCUIT

unless otherwise noted )

Excellent package for good heat dissipation

t

i

n

U

t

i

m

i

L

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

V

e

g

a

t

l

o

V

e

c

r

u

o

S

-

n

i

a

r

D

DS

-55

V

V

e

g

a

t

l

o

V

e

c

r

u

o

S

-

e

t

a

G

GS

±20

V

I

t

n

e

r

r

u

C

n

i

a

r

D

s

u

o

u

n

i

t

n

o

C

D

-30

A

I

t

n

e

r

r

u

C

n

i

a

r

D

d

e

s

l

u

P

DM

-120

A

E

y

g

r

e

n

E

e

h

c

n

a

l

a

v

A

d

e

s

l

u

P

e

l

g

n

i

S

AS

(1)

225

mJ

n

o

i

t

a

p

i

s

s

i

D

r

e

w

o

P

65

W

R

t

n

e

i

b

m

A

o

t

n

o

i

t

c

n

u

J

m

o

r

f

e

c

n

a

t

s

i

s

e

R

l

a

m

r

e

h

T

θJA

℃/W

T

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

J

150

℃

T

e

g

n

a

R

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

stg

-55 ~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)

L

260

℃

T

MARKING

NCE55P30K= Part No.

XXXX=Date Code

2.2

W

(Note 4a)

56