2018. 04. 02

2/5

FTK55P30D

Revision No : 2

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

(BR) DSS

V

Zero gate voltage drain current

DSS

-1

µA

Gate-body leakage current

GSS

±100

nA

On characteristics (note1)

e

g

a

t

l

o

v

d

l

o

h

s

e

r

th

e -

t

a

G

GS(th)

-4

V

Static drain-source on-sate resistance

DS(on)

40

mΩ

g

e

c

n

a

t

c

u

d

n

o

c

s

n

a

r

t

d

r

a

w

r

o

F

FS

8

S

Dynamic characteristics (note 2)

C

e

c

n

a

t

i

c

a

p

a

c

t

u

p

n

I

iss

3500

C

e

c

n

a

t

i

c

a

p

a

c

t

u

p

t

u

O

oss

240

Reverse transfer capacitance

rss

f =1MHz

153

pF

Switching characteristics (note 2)

Q

e

g

r

a

h

c

e

t

a

g

l

a

t

o

T

g

56

Q

e

g

r

a

h

c

e

c

r

u

o

s

-

e

t

a

G

gs

11

Q

e

g

r

a

h

c

n

i

a

r

d

-

e

t

a

G

gd

24

nC

t

e

m

i

t

y

a

l

e

d

n

o

-

n

r

u

T

d (on)

12

t

e

m

i

t

e

s

i

r

n

o

-

n

r

u

T

r

15

t

e

m

i

t

y

a

l

e

d

f

f

o

-

n

r

u

T

d(off)

38

t

e

m

i

t

ll

a

f

f

f

o

-

n

r

u

T

f

15

ns

Drain-Source Diode Characteristics

Drain-source diode forward voltage(note1)

SD

-1.2

V

Continuous drain-source diode forward

current (note3)

-30

A

Pulsed drain-source diode forward current

SM

-120

A

Notes:

1.

Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

2.

Guaranteed by design, not subject to production.

3.

Surface Mounted on FR4 Board, t≤10 sec.

V

R

C

V

I

I

I

V

is defined as the solder mounting surface of the drain pins.

52°C/W when mounted on a

100°C/W when mounted

on a minimum pad.

a)

b)

-55

-2.0