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FTK65T360F Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK65T360F Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 8 page  N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● Small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） VDS 650 V RDS(ON)TYP 300 m Ω ID 11.5 A Table 1. Absolute Maximum Ratings (TC=25°C) Schematic diagram 2018. 05. 21 1/8 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTK65T360DD/F/P Package Marking And Ordering Information Device Device Package Marking FTK65T360DD TO-263 NCE65T360D FTK65T360P TO-220 TO-263 TO-220 TO-220F NCE65T360 FTK65T360F TO-220F NCE65T360F Parameter Symbol Unit Drain-Source Voltage ( VGS=0V） VDS 650 V Gate-Source Voltage ( VDS=0V) AC (f>1 Hz) VGS ±30 V ContinuousDrain Current at Tc=25℃ ID (DC) 11.5 11.5* A ContinuousDrain Current at Tc=100℃ ID (DC) 7 7* A Pulsed drain current (Note 1) IDM (pluse) 46 46* A Maximum Power Dissipation (Tc=25℃) Derate above 25℃ PD 101 0.81 32.6 0.26 W W/ °C Single pulse avalanche energy (Note 2) EAS 144 mJ Avalanche current (Note 1) IAR 6 A Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1) EAR 0.5 mJ FTK65T360DD FTK65T360P FTK65T360F |
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