Parameter

Symbol

Value

Unit

dv/dt

50

V/ns

dv/dt

15

V/ns

Operating Junction and Storage Temperature Range

-55...+150

°C

Table 2. Thermal Characteristic

Table 3. Electrical Characteristics (TA=25°C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

650

V

Zero Gate Voltage Drain Current (Tc=25°C)

1

μA

Zero Gate Voltage Drain Current (Tc=125°C)

100

μA

Gate-Body Leakage Current

±100

nA

Gate Threshold Voltage

3

4

V

Drain-Source On-State Resistance

300

360

mΩ

Dynamic Characteristics

Input Capacitance

F=1.0MHz

870

pF

Output Capacitance

54

pF

Reverse Transfer Capacitance

1.8

pF

Total Gate Charge

19

nC

Gate-Source Charge

6

nC

Gate-Drain Charge

6.5

nC

Switching times

Turn-on Delay Time

11

nS

Turn-on Rise Time

8

nS

Turn-Off Delay Time

58

70

nS

Turn-Off Fall Time

9

14

nS

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

11.5

A

Pulsed Source-drain current(Body Diode)

46

A

Forward On Voltage

0.9

1.2

V

Reverse Recovery Time

220

nS

Reverse Recovery Charge

2.2

uC

Peak Reverse Recovery Current

19

A

2018. 05. 21

2/8

Revision No : 0

FTK65T360DD/F/P

* limited by maximum junction temperature

Parameter

Symbol

FTK65T360DD

FTK65T360P

FTK65T360F

Unit

Thermal Resistance，Junction-to-Case（Maximum）

1.24

3.84

°C /W

Thermal Resistance，Junction-to-Ambient （Maximum）

62

80

°C /W