2012.08.27

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SEMICONDUCTOR

TECHNICAL DATA

FTK2302

Revision No : 0

D

G

S

DESCRIPTION

The FTK2302 uses advanced trench technology to

with gate voltages as low as 2.5V. This device is suitable

for use as a Battery protection or in other Switching

application.

Schematic diagram

GENERAL FEATURES

● V

= 20V,I

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

N02

FTK2302

SOT-23

Ø180mm

8 mm

3000 units

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

2.4

A

1.7

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

10

A

Maximum Power Dissipation

0.9

W

Operating Junction and Storage Temperature Range

-55 To 150

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

140

/W

℃

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

μA

20

V

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

μA

0.65

0.95

1.2

V

DS

1

3

2

G

D

S

N02

< 115m

Ω @ V

< 60m

Ω @ V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Marking and pin Assignment

Application

●Battery protection

●Load switch

●Power management

SOT-23 top view

20V N-Channel Enhancement-Mode MOSFET

● We declare that the material of product are Halogen Free and compliance with RoHS requirements.