MMBTH81 datasheet(2/11 Pages) ONSEMI

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Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

ON CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

IC = 1.0 mA, IB = 0

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10

µA, I

E = 0

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10

µA, I

C = 0

3.0

ICBO

Collector Cutoff Current

VCB = 10 V, IE = 0

100

IEBO

Emitter Cutoff Current

VEB = 2.0 V, IC = 0

100

hFE

DC Current Gain

IC = 5.0 mA, VCE = 10 V

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 5.0 mA, IB = 0.5 mA

0.5

VBE(on)

Base-Emitter On Voltage

IC = 5.0 mA, VCE = 10 V

0.9

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product

IC = 5.0 mA, VCE = 10 V,

f = 100 MHz

600

MHz

Ccb

Collector-Base Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

0.85

Cce

Collector Emitter Capcitance

VCB = 10 V, IB = 0, f = 1.0 MHz

0.65

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Typical Characteristics

Symbol

Parameter

Test Conditions

Min

Max

Units

PNP RF Transistor

(continued)

PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1

Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026

Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)

Spice Model

DC Current Gain vs

Collector Current

0.1

100

120

140

160

180

200

I - COLLECTOR CURRENT (mA)

= 1.0V

T = 125°C

T = 25°C

T = 55°C

Collector Saturation Voltage

vs Collector Current

0.1

100

0.01

0.02

0.05

0.1

0.2

0.5

I - COLLECTO R CURRENT ( mA)

T =

55°C

T = 25°C

T = 125°C

= 10 I

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