MMBTH81 datasheet(3/11 Pages) ONSEMI

3 / 11 page

Typical Characteristics (continued)

PNP RF Transistor

(continued)

Input / Output Capacitance

vs Reverse Bias Voltage

-10

-8

-6

-4

-2

1.2

1.4

1.6

1.8

2.2

2.4

2.6

2.8

REVERSE BIAS VOLTAGE (V)

C ibo

f = 1.0 MHz

C obo

Contours of Constant Gain

Bandwidth Product (f )

0.1

100

-14

-12

-10

-8

-6

-4

-2

I - COLLECTOR CURRENT (mA)

200 MHz

500 MHz

900 MHz

200 MHz

500 MHz

1200 MHz

1500 MHz

Power Dissipation vs

Ambient Temperature

255075

100

125

150

100

150

200

250

300

350

TEMPERATURE ( C)

SOT-23

TO-92

Base-Emitter ON Voltage

vs Collector Current

0.1

100

0.2

0.4

0.6

0.8

I - COLLE CTOR CURRENT (mA)

= 10V

T = 25°C

T = 100°C

Base-Emitter Saturation

Voltage vs Collector Current

0.1

100

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

I - COLLECTOR CURRENT (mA)

T = 55°C

T = 25°C

T = 125°C

= 10 I

Collector Reverse Current

vs Ambient Temperature

100

125

150

0.01

0.1

100

- AM BIENT TE MPE RATURE ( C)

= -6.0V

= -3.0V

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