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Revision No : 0

FTK4503

2011. 11. 21

N-Ch

30

Drain-Source Breakdown Voltage

P-Ch

-30

V

N-Ch

1

Zero Gate Voltage Drain Current

P-Ch

-1

μA

N-Ch

±100

Gate-Body Leakage Current

P-Ch

±100

nA

ON CHARACTERISTICS (Note 3)

N-Ch

1

1.9

3

Gate Threshold Voltage

P-Ch

-1

-1.8

-3

V

N-Ch

22

28

P-Ch

32

36

N-Ch

38

42

Drain-Source On-State Resistance

P-Ch

50

55

mΩ

N-Ch

4

Forward Transconductance

P-Ch

4

S

DYNAMIC PARAMETERS

N-Ch

770

Input Capacitance

P-Ch

1380

N-Ch

80

Output Capacitance

P-Ch

150

N-Ch

75

Reverse Transfer Capacitance

N-Ch

P-Ch

P-Ch

140

pF

SWITCHING CHARACTERISTICS (Note 4)

N-Ch

5.0

Turn-on Delay Time

P-Ch

8.0

nS

N-Ch

8.0

Turn-on Rise Time

P-Ch

7.0

nS

N-Ch

18.5

Turn-Off Delay Time

P-Ch

34

nS

N-Ch

9.0

Turn-Off Fall Time

N-Ch

P-Ch

P-Ch

26

nS

N-Ch

13.5

Total Gate Charge

P-Ch

20

nC

N-Ch

1.4

Gate-Source Charge

P-Ch

2

nC

N-Ch

4.7

Gate-Drain Charge

N-Ch

P-Ch

P-Ch

7

nC

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DRAIN-SOURCE DIODE CHARACTERISTICS

N-Ch

1.2

V

Diode Forward Voltage

P-Ch

-1.2

V