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LM4185 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM4185
Description  P-Channe lEnhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM4185 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Note：
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Symbol
Parameter
Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=-250μA
-40
V
I
DSS
Zero Gate Voltage Drain Current
V
DS=-40V,VGS=0V
1
μA
I
GSS
Gate-Body Leakage Current
V
GS=±20V,VDS=0V
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=-250μA
-1.0
-1.6
-2.5
V
R
DS(ON)
Drain-Source On-State esistance
V
GS=-10V, ID=-15A
15
20
mΩ
V
GS=-4.5V, ID=-10A
20
25
mΩ
DYNAMIC PARAMETERS
Ciss
Input Capacitance
V
DS=-25V,VGS=0V,
F=1.0MHz
2100
pF
Coss
Output Capacitance
160
pF
Crss
Reverse Transfer Capacitance
130
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
VDS=-20V,ID=-1A,
V
GS=-10V,
R
G=6Ω
18
nS
tr
Turn-on Rise Time
4.2
nS
td(off)
Turn-Off Delay Time
72
nS
tf
Turn-Off Fall Time
10
nS
Qg
Total Gate Charge
V
DS=-20V,ID=-5A,
VGS=-4.5V
17
nC
Qgs
Gate-Source Charge
6
nC
Qgd
Gate-Drain Charge
5.1
nC
VSD
Diode Forward Voltage
VGS=0V,ISD=-1A
0.72
1.4
V
LM4185
Rev :
www.leiditech.com
01.06.2018
2/5



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