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SEMICONDUCTOR

TECHNICAL DATA

FTK4828F

Revision No : 0

N-Channel MOSFET

DESCRIPTION

The FTK4828F uses advancd trench technology to provide excellent

This device is suitable for use as a load switch

or in PWM applications.

s

t

i

n

U

e

u

l

a

V

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

V

e

g

a

t

l

o

V

e

c

r

u

o

S

-

n

i

a

r

D

DS

V

0

6

V

e

g

a

t

l

o

V

e

c

r

u

o

S

-

e

t

a

G

GS

V

0

2

±

Continuous Drain Current (t

≤10s

I

)

1

e

t

o

n

(

)

D

2.0

A

P

n

o

i

t

a

p

i

s

s

i

D

r

e

w

o

P

C

W

0.5

Thermal Resistance from Junction to Ambient (t

250

℃/W

Power Dissipation *

W

Avalanche Current (note 2)

19

A

Repetitive Avalenche Energy 0.1mH (note 2)

18

mJ

T

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

J

150

℃

T

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

STG

-55~ +150

℃

1. GATE

2. DRAIN

3. SOURCE

DIM

A

B

D

E

G

H

K

4.70 MAX

2.50 0.20

1.70 MAX

0.45 0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.7 MAX

0.7 MIN

0.5 0.15/-0.10

SOT-89

C

J

G

D

A

C

K

F

MILLIMETERS

H

F

1

2

3

F

D

_

_

0.8*

*When mounted on a 40 × 40 × 0.7 mm alumina board.