2017. 05. 10

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SEMICONDUCTOR

TECHNICAL DATA

FTK4903D

Revision No : 0

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to Case

---

1.7

℃/W

Thermal Resistance Junction to ambient

---

62

℃/W

BVDSS

RDSON

ID

-40V

15mΩ

-45A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -40V,-45A, RDS(ON) 15

mΩ@VGS = -10V

General Description

Features

Applications

Thermal Characteristics

TO-252 Pin Configuration

G

D

S

S

D

G

40V P-channel MOS FET

 Fast switching

 Green Device Available

 MB / VGA / Vcore

 POL Applications

 Load Switch

 LED Application

Symbol

Parameter

Rating

Units

Drain-Source Voltage

V

Gate-Sou

rce Voltage

± 20

V

-45

A

-28

A

-180

A

EAS

130

mJ

IAS

51

A

73.5

W

Power Dissipation – Derate above 25℃

0.59

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃