G 2

S 2

G 1

S 1

4

3

2

1

D 2

D 2

D 1

D 1

5

6

7

8

Q4 953

G 1

D1

D2

G 2

S1

S2

Schematic diagram

Marking and pin Assignment

SOP-8 top view

DESCRIPTION

The FTK4953 uses advanced trench technology to

provide excellent RDS(ON), low gate charge. It has

been optimized for power management applications

requiring a wide range of gave drive voltage ratings

(4.5V – 25V).

GENERAL FEATURES

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Application

●Battery protection

●Load switch

●Power management

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

Q4953

FTK4953

SOP-8

Ø330mm

12mm

2500 units

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

-4.9

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

-30

A

Maximum Power Dissipation

2.0

W

Operating Junction and Storage Temperature Range

-55 To 150

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

62.5

/W

℃

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Zero Gate Voltage Drain Current

-1

µA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

-1

-2

V

Drain-Source On-State Resistance

43

53

m

Ω

64

85

m

Ω

Forward Transconductance

5

10

S

FTK4953

2008. 12. 5

1/4

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 0