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FTK4964Z Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK4964Z
Description  40V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4964Z Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK4964Z Datasheet HTML 1Page - First Silicon Co., Ltd FTK4964Z Datasheet HTML 2Page - First Silicon Co., Ltd FTK4964Z Datasheet HTML 3Page - First Silicon Co., Ltd FTK4964Z Datasheet HTML 4Page - First Silicon Co., Ltd FTK4964Z Datasheet HTML 5Page - First Silicon Co., Ltd  
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40V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=10A
---
5.5
6.5
mΩ
VGS=4.5V , ID=5A
---
6.9
8.5
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
16
---
S
Qg
Total Gate Charge3,4
VDS=20V , VGS=10V , ID=10A
---
36
72
nC
Qgs
Gate-Source Charge3,4
---
3.85
7
Qgd
Gate-Drain Charge3,4
---
6.05
12
Td(on)
Turn-On Delay Time3,4
VDD=15V , VGS=10V , RG=6Ω
ID=1A
---
13.6
25
ns
Tr
Rise Time3,4
---
2.5
5
Td(off)
Turn-Off Delay Time3,4
---
68
120
Tf
Fall Time3,4
---
5
10
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
1540
2500
pF
Coss
Output Capacitance
---
171
330
Crss
Reverse Transfer Capacitance
---
115
220
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.2
2.2
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
54
A
ISM
Pulsed Source Current3
---
---
108
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=39A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics
Dynamic Characteristics
On Characteristics
FTK4964Z
2018. 12. 17
2/5
Revision No : 0



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