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FTK6710 Datasheet(PDF) 4 Page - First Silicon Co., Ltd |
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FTK6710 Datasheet(HTML) 4 Page - First Silicon Co., Ltd |
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4 / 6 page ![]() Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID= -250uA -60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID= -1mA --- -0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS= -60V , VGS=0V , TJ=25℃ --- --- -1 uA VDS= -48V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS= -10V , ID=-6A --- 87 105 mΩ VGS= -4.5V , ID=-3A --- 120 145 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID= -250uA -1.0 -1.6 -2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/℃ gfs Forward Transconductance VDS= -10V , ID=-6A --- 5.5 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS= -30V , VGS=-10V , ID=-4A --- 10 15 nC Qgs Gate-Source Charge2 , 3 --- 1.6 3.2 Qgd Gate-Drain Charge2 , 3 --- 3 6 Td(on) Turn-On Delay Time2 , 3 VDD= -30V , VGS=-10V , RG=6Ω ID= -1A --- 8 16 ns Tr Rise Time2 , 3 --- 15.4 30 Td(off) Turn-Off Delay Time2 , 3 --- 42.8 80 Tf Fall Time2 , 3 --- 8.4 16 Ciss Input Capacitance VDS= -30V , VGS=0V , F=1MHz --- 785 1300 pF Coss Output Capacitance --- 175 300 Crss Reverse Transfer Capacitance --- 112 220 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -3.5 A ISM Pulsed Source Current --- --- -7 A VSD Diode Forward Voltage VGS=0V , IS= -1A , TJ=25℃ --- --- -1 V Note : 4. Repetitive Rating : Pulsed width limited by maximum junction temperature. 5. The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%. 6. Essentially independent of operating temperature. P-CH Electrical Characteristics (TJ=25 ℃, unless otherwise) Drain-Source Diode Characteristics and Maximum Ratings 60V N+P Dual Channel MOSFETs FTK6710 2018. 10. 10 4/6 Revision No : 0 |
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