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FTK6710 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK6710
Description  60V NP Dual Channel MOSFETs
PDF  6 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6710 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.05
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=6A
---
45
54
mΩ
VGS=4.5V , ID=3A
---
52
63
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.8
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.2
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=4A
---
4.2
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=30V , VGS=10V , ID=4A
---
14
21
nC
Qgs
Gate-Source Charge2 , 3
---
2.9
5
Qgd
Gate-Drain Charge2 , 3
---
2.3
4
Td(on)
Turn-On Delay Time2 , 3
VDD=30V , VGS=10V , RG=3.3Ω
ID=1A
---
3.9
7
ns
Tr
Rise Time2 , 3
---
12.6
24
Td(off)
Turn-Off Delay Time2 , 3
---
23.1
44
Tf
Fall Time2 , 3
---
6.7
13
Ciss
Input Capacitance
VDS=15V , VGS=0V , F=1MHz
---
800
1160
pF
Coss
Output Capacitance
---
380
550
Crss
Reverse Transfer Capacitance
---
115
170
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.7
3.4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
4.5
A
ISM
Pulsed Source Current
---
---
9
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
N-CH Electrical Characteristics (TJ=25 ℃, unless otherwise)
Drain-Source Diode Characteristics and Maximum Ratings
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
3.
Essentially independent of operating temperature.
60V N+P Dual Channel MOSFETs
2018. 10. 10
2/6
Revision No : 0
FTK6710



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