60V P-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

-60

V

Gate-Sou

rce Voltage

±20

V

℃)

-61

A

℃)

-38.6

A

-244

A

EAS

245

mJ

IAS

-70

A

℃)

171

W

Power Dissipation – Derate above 25

℃

1.37

W/

℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to Case

---

0.73

℃/W

Thermal Resistance Junction to ambient

---

62

℃/W

BVDSS

RDSON

ID

-60V

22m

Ω

-61A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -60V,-61A, RDS(ON) 22m

Ω@VGS = -10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

 Networking

 Load Switch

 LED applications

Thermal Characteristics

TO-220 Pin Configuration

G

D

S

1

1. Gate

2. Drain

3. Source

3

2

2018. 11. 30

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK6965AP