2016. 04. 10

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SEMICONDUCTOR

TECHNICAL DATA

FTK7002

Revision No : 2

Device

Marking

Shipping

ORDERING INFORMATION

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

60

60

Drain Current

°C (Note 1.)

°C (Note 1.)

– Pulsed (Note 2.)

mAdc

Gate–Source Voltage

– Continuous

– Non–repetitive (tp≤50 µs)

Vdc

Vpk

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

Derate above 25℃

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

556

°C/W

Total Device Dissipation

Alumina Substrate,(Note 4.) TA= 25°C

Derate above 25C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

417

°C/W

Junction and Storage Temperature

-55 to

+150

°C

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width≤300

µs, Duty Cycle≤2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

N–Channel SOT–23

•

±210

±1.4A

±20

±40

±300

Small Signal MOSFET

300 mAmps, 60 Volts

ESD Protected:1000V

•

•

We declare that the material of product are Halogen Free and

compliance with RoHS requirements.

FTK7002

702

3000 Tape & Reel

702

702

= Device Code

W

=Month Code

MARKING DIAGRAM

& PIN ASSIGNMENT

3

2

1

Gate

Source

Drain

3

2

1

(Top View)

Simplified Schematic

1

3

2

SOT– 23 (TO–236AB)