2014.01.27

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SEMICONDUCTOR

TECHNICAL DATA

FTK9451

Revision No : 1

P-Channel 20-V(D-S) MOSFET

The Advanced Power MOSFETs provide the desigher with the

best combination of fast switching, ruggedized device desigh,

ultra low on- resistance and cost-effectiveness.

1. GATE

2. DRAIN

3. SOURCE

℃ unless otherwise noted)

Parameter

Symbol

Value

Units

Drain-Source Voltage

-20

Continuous Gate-Source Voltage

±12

V

Continuous Drain Current

A

3

.

2

-

Power Dissipation

5

.

0

W

Thermal Resistance from Junction to Ambient

250

℃/W

Operating Temperature

0

5

1

Storage Temperature

-55 ~+150

℃

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

-20

V

Gate-body leakage

±100

nA

Zero gate voltage drain current

-1.0

µA

On characteristics

Gate-threshold voltage

-0.50

-1.50

V

0.135

Static drain-source on-resistance (note 1)

0.240

Ω

Forward transconductance (note 1)

2.3

S

Dynamic characteristics (note 2)

Input capacitance

430

Output capacitance

100

Reverse transfer capacitance

35

pF

Switching characteristics

Turn-on delay time (note 1,2)

9

Rise time (note 2)

25

Turn-off delay time (note 2)

20

Fall time (note 2)

10

ns

Drain-source body diode characteristics

Body diode forward voltage (note 1)

-1.6

V

No tes:

1.

Pulse Test ; Pulse Width

2.

These parameters have no way to verify.

DIM

A

B

D

E

G

H

K

4.70 MAX

2.50 0.20

1.70 MAX

0.45 0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.7 MAX

0.7 MIN

0.5 0.15/-0.10

SOT-89

C

J

G

D

A

C

K

F

MILLIMETERS

H

F

1

2

3

F

D

_

_

*2.0

* When implemented on a ceramic PCB

*62.5