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2SC5161 Datasheet(PDF) 1 Page - Rohm |
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2SC5161 Datasheet(HTML) 1 Page - Rohm |
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1 / 4 page ![]() 2SC5161 Transistors Rev.A 1/3 High voltage switching transistor (400V, 2A) 2SC5161 Features 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) (IC/IB=1A/0.2A) 2) High breakdown voltage. VCEO=400V 3) Fast switching. tf ≤1.0µs (IC=0.8A) Structure Three-layer, diffused planar type NPN silicon transistor External dimensions (Unit : mm) (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 −0.1 +0.2 −0.1 +0.2 2.3 ±0.2 2.3 ±0.2 0.65 ±0.1 0.9 0.75 1.0 ±0.2 0.5 ±0.1 2.3 0.5 ±0.1 6.5 ±0.2 5.1 C0.5 (3) (2) (1) Absolute maximum ratings (Ta=25 °C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=10ms Parameter VCBO VCEO VEBO IC PC Tj Tstg 400 V V V A(DC) W W(Tc =25°C) °C °C 400 7 2 ICP A(Pulse) 4 ∗ 1 10 150 −55 to +150 Symbol Limits Unit |
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