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HM640 Datasheet(PDF) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM640
Description  the silicon N-channel Enhanced VDMOSFETs
PDF  10 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM640 Datasheet(HTML) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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General Description：
HM640, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
l
Fast Switching
l
Low ON Resistance(Rdson≤0.18Ω)
l
Low Gate Charge (Typical Data:24nC)
l
Low Reverse transfer capacitances(Typical:25pF)
l
100% Single Pulse avalanche energy Test
Applications：
CRT、TV/Monitor and Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
200
V
Continuous Drain Current
18
A
ID
Continuous Drain Current TC = 100 °C
11.2
A
IDM
a1
Pulsed Drain Current
72
A
VGS
Gate-to-Source Voltage
±
30
V
EAS
a2
Single Pulse Avalanche Energy
950
mJ
EAR
a1
Avalanche Energy ,Repetitive
90
mJ
IAR
a1
Avalanche Current
4.2
A
dv/dt
a3
Peak Diode Recovery dv/dt
5.0
V/ns
Power Dissipation
156
W
PD
Derating Factor above 25°C
1.25
W/℃
TJ，Tstg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
TL
MaximumTemperature for Soldering
300
℃
VDSS
200
V
ID
18
A
PD(TC=25℃)
156
W
RDS(ON)Typ
0.12
Ω
Pa ge 1 of 1 0
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM640


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