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HM640 Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM640
Description  the silicon N-channel Enhanced VDMOSFETs
PDF  10 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM640 Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
200
--
--
V
Δ
BVDSS/ΔTJ Bvdss Temperature Coefficient
ID=250uA,Reference25℃
--
0.25
--
V/℃
VDS = 200V, VGS= 0V,
Ta = 25℃
--
--
1
IDSS
Drain to Source Leakage Current
VDS =160V, VGS= 0V,
Ta = 125℃
--
--
10
µ
A
IGSS(F)
Gate to Source Forward Leakage
VGS =+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS =-30V
--
--
-100
nA
ON Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=10.8A
--
0.12 0.18
Ω
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.0
4.0
V
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
VDS=15V, ID =18A
--
18
--
S
Ciss
Input Capacitance
--
1140
--
Coss
Output Capacitance
--
180
--
Crss
Reverse Transfer Capacitance
VGS = 0V VDS = 25V
f = 1.0MHz
--
25
--
pF
Resistive Switching Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(ON)
Turn-on Delay Time
--
11
--
tr
Rise Time
--
33
--
td(OFF)
Turn-Off Delay Time
--
25
--
tf
Fall Time
ID =18A
VDD = 100V
VGS = 10V RG =2.4Ω
--
7
--
ns
Qg
Total Gate Charge
--
24
Qgs
Gate to Source Charge
--
7.5
--
Qgd
Gate to Drain (“Miller”)Charge
ID =18A VDD =100V
VGS = 10V
--
9.5
--
nC
Pa ge 2 of 1 0
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM640



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