HM2012 datasheet(2/7 Pages) HMSEMI

2 / 7 page

Ordering Information

P/N

TEMP RANGE

PIN-PACKAGE

HM2012Q

-40°C to +85°C

20 pin QFN

HM2012W

-40°C to +85°C

16 ball WCSP

Note: The

HM2012 is thermally limited in WCSP and may not achieve 2.1W/ch for 4Ω.

Absolute Maximum Ratings

Supply Voltage (VDD) in active mode

-0.3 V to 5.5V

Supply Voltage (VDD) in shutdown mode

-0.3 V to 6.0V

Input Voltage (VI)

-0.3V to VDD+0.3V

Operating Free-air Temperature range (TA)

-40°C to 85°C

Operating Junction Temperature range (TJ)

-40°C to +125°C

Storage Temperature (TSTG) range

-65°C to +150°C

Operation Ratings

Supply Voltage (VDD)

2.7V to 5.5V

High Level Input Voltage (VIH)

1.3V to VDD

Low Level Input Voltage (VIL)

0 to 0.35V

Operating Temperature (TA)

-40°C to +85°C

Electrical Characteristics

TA=25°C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

∣

VOO∣

Output offset voltage (measured

differentially)

Inputs

grounded,

AV=6dB,

VDD=2.7V to 5.5V

PSRR

Power supply rejection ratio

VDD=2.7V to 5.5V

-75

-55

CMRR

Common mode rejection ratio

Inputs shouted together,

VDD=2.7V to 5.5V

-70

-50

∣

IIH∣

High-level input current

VDD=5.5V, VI= VDD

μA

∣

IIL∣

Low-level input current

VDD=5.5V, VI=-0V

μA

VDD=5.5V, no load or output filter

7.5

IDD

Supply current

VDD=3.6V, no load or output filter

5.5

VDD=5.5V

420

rDS(ON)

Static

Drain-source

On-state

Resistance

VDD=3.6V

520

mΩ

Output impedance in SHUTDOWN

V(SHOUTDOWN)=0.35V

kΩ

f(SW)

Switching frequency

VDD=2.7V to 5.5V

250

300

350

kHZ

G0, G1=0.35V

5.5

6.5

G0= VDD, G1=0.35V

11.5

12.5

G0=0.35V, G1= VDD

17.5

18.5

Closed-loop voltage gain

G0, G1= VDD

23.5

24.5

HM2012

HM2012 Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM2012 Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL