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FTK7N70PD Datasheet(PDF) 3 Page - First Silicon Co., Ltd |
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FTK7N70PD Datasheet(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 7 page ![]() 2016. 05. 10 3/7 Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25˚C ,unlessOtherwise specified.) VSD VGS = 0 V, IS = 7.0A 1.4 V IS A ISM A tRR 320 ns QRR VGS = 0 V, IS = 7.0A, dIF/dt =100 A/µs (Note 4) 2.4 µC Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge MAX FTK7N70P/F/DD 10 40 |
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