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FTK7N70PD Datasheet(PDF) 7 Page - First Silicon Co., Ltd |
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FTK7N70PD Datasheet(HTML) 7 Page - First Silicon Co., Ltd |
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7 / 7 page ![]() 2016.05. 10 7/ 7 Revis ion No : 0 FTK7N70P/F/DD On-Resistance Variation vs. Drain Current and Gate Voltage 1 0.1 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150 25 Notes: 1. VGS=0V 2. 250�s Test 2000 0 0.1 Drain-SourceVoltage, VDS (V) 1600 400 1 10 Ciss 1200 800 Notes: 1. VGS=0V 2. f = 1MHz Ciss Cgs+Cgd (Cds=shorted ) Coss=Cds+Cgd Crss=Cgd Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 10 30 50 8 10 12 20 6 4 2 0 VDS=130V VDS=520V VDS=325V 40 Gate Charge Characteristics Coss Crss 60 70 Note: ID=7A Notes: 1. JC (t) = 0. 88 /W Max. 2. Duty Factor , D=t1/t2 3.TJM-TC=PDM× JC (t) 1 0.1 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve 0 4 8 12 16 20 0 1 2 3 V GS = 20V V GS = 10V Note : T J = 25 oC I D, Drain Current [A] |
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