| Electronic Components Datasheet Search |
|
FTK8N80PD Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
|
|
|||||||||||||||||||||||||||||
FTK8N80PD Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
|
1 / 8 page ![]() 1.Gate 3.Source 2.Drain TO-220 1 1 TO-220F 8.0 Amps, 800 Volts N-Channel MOS-FET DESCRIPTION FEATURES * RDS(ON) = 1.9Ω@V GS = 10V * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Order Number Pin Assignment Package 1 2 3 Packing FTK8N80P TO-220 G D S Tube FTK8N80DD TO-263 G D S Tube Note: Pin Assignmen: G: Gate D: Drain S: Source 2012. 07. 05 1/8 SEMICONDUCTOR TECHNICAL DATA FTK8N80P/D/DD Revision No : 0 P : F : 1 TO-263 DD : FTK8N80F TO-220F G D S Reel & Taping These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suited for high efficiency switch mode power supply electronic lamp ballasts based on half bridge topology. |
Similar Part No. - FTK8N80PD |
|
Similar Description - FTK8N80PD |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |