Rev 1.1

27/03/21

General purpose high voltage amplifier in bare die form

Complement to NPN MPSA05

PNP Transistor Bare Die, MPSA55

Features:

Die Dimensions in µm (mils)

500 (25.98)

95

(3.74)

B

E







Characterized at temperature extremes



High Reliability Gold Back Metal



High Reliability tested grades for Military + Space

Ordering Information:

The following part suffixes apply:



No suffix - MIL-STD-750 /2072 Visual Inspection



“H” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class H LAT



“K” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

E = EMITTER B = BASE

DIE BACK = COLLECTOR

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

Die Size

(Excluding Saw Street)

500 x 500

19.69 x 19.69

µm

mils

Base & Emitter Pad Size

95 x 96

3.74 x 3.78

µm

mils

Die Thickness

180 (±20)

7.09 (±0.79)

µm

mils

Top Metal Composition

Al - 2.6µm

Back Metal Composition

AuAs - 0.9µm

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