Rev 1.1

27/03/21

PNP Transistor Bare Die, MPSA55

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-60

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-4

V

Collector Current

-500

mA

Junction Temperature

150

°C

Storage Temperature

-55 to 150

°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

-60

-

-

V

Collector-Emitter Breakdown Voltage

-60

-

-

V

Emitter-Base Breakdown Voltage

-5

-

-

V

Collector Cut-off Current

-

-

-100

nA

Emitter Cut-off Current

-

-

-100

nA

ON CHARACTERISTICS

100

-

-

-

Forward-Current Transfer Ratio

100

-

-

-

Collector-Emitter Saturation Voltage

-

-

-0.25

V

Base Saturation Voltage

-

-

-1.2

V

SMALL SIGNAL CHARACTERISTICS

1

Transition Frequency

50

70

-

MHz

Output Capacitance

-

3.5

-

pF

Note 1: Not production testing in die form. Characterized by chip design and tested in package LAT.

Typical Electrical Characteristics

Fig 2 - Collector-Emitter Saturation Voltage

versus Collector Current

Collector Current

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