HM9902A

ELECTRICAL CHARACTERISTICS

Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified

- 3 -

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Detection Voltage

Overcharge Detection Voltage

4.225

4.25

4.275

V

Overcharge Release Voltage

4.075

4.10

4.125

V

Overdischarge Detection Voltage

2.85

2.9

2.95

V

Overdischarge Release Voltage

2.9

3.0

3.1

V

Charger Detection Voltage

-0.07

-0.12

-0.2

V

Detection Current

Overdischarge Current1 Detection

* By Design

7

10

13

A

Load Short-Circuiting

Detection

30

40

50

A

Current Consumption

Current Consumption in Normal

Operation

VM =0V

6

9

Current Consumption in power

Down

VM pin floating

3

VM Internal Resistance

Internal Resistance between

VM=1.0V

320

k

Ω

Internal Resistance between VM

and GND

VM=1.0V

100

k

Ω

FET on Resistance

Equivalent FET on Resistance

20

m

Ω

Over Temperature Protection

Maximum Junction Temperature

125

°C

Storage Temperature

-55 to 150

°C

Lead Temperature ( Soldering, 10 sec)

300

°C

Power Dissipation at T=25°C

0.625

W

250

°C/W

130

°C/W

ESD

2000

V

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