4AM17 datasheet(4/7 Pages) HITACHI

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4AM17

( P Channel )

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage V

(BR)DSS

–60

—

D = –10 mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20

——V

G = ±100 µA, VDS = 0

Gate to source leak current

GSS

——

±10

µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current

DSS

—

–250

µAV

DS = –50 V, VGS = 0

Gate to source cutoff voltage

GS(off)

–1.0

—

–2.5

DS = –10 V, I D = –1 mA

Static drain to source on state

DS(on)

—

0.15

0.2

Ω

D = –4 A, VGS = –10 V

Note3

resistance

DS(on)

—

0.2

0.27

Ω

D = –4 A, VGS = –4 V

Note3

Forward transfer admittance

fs|

3.5

6.0

—

D = –4 A, VDS = –10 V

Note3

Input capacitance

Ciss

—

DS = –10 V

Output capacitance

Coss

—

460

—

GS = 0

Reverse transfer capacitance

Crss

—

1.2

—

f = 1 MHz

Gate series resistance

—

3.2

—

Ω

DS = 0, VGS = 0 f = 1 MHz

Turn-on delay time

d(on)

—

0.6

—

GS = –10 V, ID = –4 A

Rise time

—

2.1

—

L = 7.5 Ω

Turn-off delay time

d(off)

—12

—

Fall time

—

5.8

—

Body–drain diode forward voltage

—

–1.2

—

F = –8 A, VGS = 0

Body–drain diode reverse

recovery time

—

2.5

—

F = –8 A, VGS = 0

diF/ dt = 50 A/

µs

Note:

Pulse test

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