4AM17 datasheet(3/7 Pages) HITACHI

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4AM17

Electrical Characteristics (Ta = 25

°C)

( N Channel )

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

(BR)DSS

——V

D = 10 mA, VGS = 0

Gate to source breakdown voltage

(BR)GSS

±20

——V

G = ±100 µA, VDS = 0

Gate to source leak current

GSS

——

±10

µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current

DSS

—

250

µAV

DS = 50 V, VGS = 0

Gate to source cutoff voltage

GS(off)

1.0

—

2.5

DS = 10 V, I D = 1 mA

Static drain to source on state

DS(on)

—

0.13

0.17

Ω

D = 4 A, VGS = 10 V

Note3

resistance

DS(on)

—

0.19

0.24

Ω

D = 4 A, VGS = 4 V

Note3

Forward transfer admittance

fs|

3.5

5.5

—

D = 4 A, VDS = 10 V

Note3

Input capacitance

Ciss

—

DS = 10 V

Output capacitance

Coss

—

220

—

GS = 0

Reverse transfer capacitance

Crss

—

5.2

—

f = 1 MHz

Gate series resistance

—

1.5

—

Ω

DS = 10 V, VGS = 0

f = 1 MHz

Turn-on delay time

d(on)

—

0.15

—

GS = 10 V, ID = 4 A

Rise time

—

0.5

—

L = 7.5 Ω

Turn-off delay time

d(off)

—

3.2

—

Fall time

—

1.4

—

Body–drain diode forward voltage

—

1.5

—

F = 8 A, VGS = 0

Body–drain diode reverse

recovery time

—

850

—

F = 8 A, VGS = 0

diF/ dt = 50 A/

µs

Note:

Pulse test

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