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H11AV1AM Datasheet(PDF) 2 Page - ON Semiconductor

Part # H11AV1AM
Description  6-Pin DIP Phototransistor Optocouplers
PDF  11 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

H11AV1AM Datasheet(HTML) 2 Page - ON Semiconductor

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H11AV1M, H11AV1AM
www.onsemi.com
2
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical
insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective
circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
<150 VRMS
I–IV
<300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
VPR
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4” Lead Spacing)
≥10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥0.5
mm
TS
Case Temperature (Note 1)
175
°C
IS,INPUT
Input Current (Note 1)
350
mA
PS,OUTPUT Output Power (Note 1)
800
mW
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
>109
W
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max
Unit
TOTAL DEVICE
TSTG
Storage Temperature
−40 to +125
°C
TOPR
Operating Temperature
−40 to +100
°C
TJ
Junction Temperature
−40 to +125
°C
TSOL
Lead Solder Temperature
260 for 10 seconds
°C
PD
Total Device Power Dissipation @ TA = 25°C
270
mW
Derate Above 25°C
2.94
mW/°C
EMITTER
IF
DC / Average Forward Input Current
60
mA
VR
Reverse Input Voltage
6
V
PD
LED Power Dissipation @ TA = 25°C
120
mW
Derate Above 25°C
1.41
mW/°C
DETECTOR
VCEO
Collector−to−Emitter Voltage
70
V
VCBO
Collector−to−Base Voltage
70
V
VECO
Emitter−to−Collector Voltage
7
V
PD
Detector Power Dissipation @ TA = 25°C
150
mW
Derate Above 25°C
1.76
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.



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