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H11AV1AM Datasheet(PDF) 3 Page - ON Semiconductor |
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H11AV1AM Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 11 page  H11AV1M, H11AV1AM www.onsemi.com 3 ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit EMITTER VF Input Forward Voltage (IF = 10 mA) TA = 25°C 0.80 1.18 1.50 V TA = −55°C 0.90 1.28 1.70 TA = 100°C 0.70 1.05 1.40 IR Reverse Leakage Current VR = 6.0 V − − 10 mA DETECTOR BVCEO Collector−to−Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 70 100 − V BVCBO Collector−to−Base Breakdown Voltage IC = 100 mA, IF = 0 70 1200 − V BVECO Emitter−to−Collector Breakdown Voltage IE = 100 mA, IF = 0 7 10 − V ICEO Collector−to−Emitter Dark Current VCE = 10 V, IF = 0 − 1 50 nA ICBO Collector−to−Base Dark Current VCB = 10 V − 0.5 − nA CCE Capacitance VCE = 0 V, f = 1 MHz − 8 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit DC CHARACTERISTIC CTR Current Transfer Ratio, Collector−to−Emitter IF = 10 mA, VCE = 10 V 100 − 300 % VCE (SAT) Saturation Voltage, Collector−to−Emitter IC = 2 mA, IF = 20 mA − − 0.4 V AC CHARACTERISTIC TON Non−Saturated Turn−on Time IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 11) − − 15 ms TOFF Non Saturated Turn−off Time IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 11) − − 15 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz − 0.2 − pF RISO Isolation Resistance VI−O = ±500 VDC, TA = 25°C 1011 − − W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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