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MCP39F511N Datasheet(PDF) 7 Page - Microchip Technology |
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MCP39F511N Datasheet(HTML) 7 Page - Microchip Technology |
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7 / 61 page ![]() 2015-2018 Microchip Technology Inc. DS20005473B-page 7 MCP39F511N DVDD Rise Rate to Ensure Internal Power-on Reset Signal SDVDD 0.05 — — V/ms 0 – 3.3V in 0.1s, 0 – 2.5V in 60 ms AVDD Start Voltage to Ensure Internal Power-on Reset Signal VPOR AGND —2.1 V AVDD Rise Rate to Ensure Internal Power-on Reset Signal SAVDD 0.042 — — V/ms 0 – 2.4V in 50 ms Operating Current IDD —15 — mA Data EEPROM Memory Cell Endurance EPS 100,000 — — E/W Self-Timed Write Cycle Time TIWD —4 — ms Number of Total Write/Erase Cycles Before Refresh RREF — 10,000,000 —E/W Characteristic Retention TRETDD 40 — — Years Provided no other specifications are violated Supply Current during Programming IDDPD —7 — mA TABLE 1-1: ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all parameters apply across both channels at AVDD, DVDD = 2.7 to 3.6V, TA = -40°C to +125°C, MCLK = 4 MHz, PGA GAIN = 1. Characteristic Sym. Min. Typ. Max. Units Test Conditions Note 1: Calculated from reading the register values with no averaging, single computation cycle with accumulation interval of 16 line cycles, channel 1 or channel 2. 2: Specification by design and characterization; not production tested. 3: N = Value in the Accumulation Interval Parameter register. The default value of this register is 4 or TCAL = 320 ms for 50 Hz line. 4: Applies to Voltage Sag and Voltage Surge events only. 5: Applies to all gains. Offset and gain errors depend on the PGA gain setting. See Section 2.0 “Typical Performance Curves” for typical performance. 6: VIN =1 VPP =353 mVRMS @50/60 Hz. 7: Variation applies to internal clock and UART only. |
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