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LM3204TL Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM3204TL
Description  Miniature, Adjustable, Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers
PDF  16 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3204TL Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD,PVIN to SGND
−0.2V to +6.0V
PGND to SGND
−0.2V to +0.2V
EN, FB, BYP, V
CON
(SGND −0.2V)
to (V
DD +0.2V)
w/6.0V max
SW, BYPOUT
(PGND −0.2V)
to (PV
IN +0.2V)
w/6.0V max
PV
IN to VDD
−0.2V to +0.2V
Continuous Power Dissipation
(Note 3)
Internally Limited
Junction Temperature (T
J-MAX)
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Maximum Lead Temperature
(Soldering, 10 sec.)
+260˚C
ESD Rating (Note 4)
Human Body Model
Machine Model
2.0kV
200V
Operating Ratings (Notes 1, 2)
Input Voltage Range
2.7V to 5.5V
Recommended Load Current
PWM Mode
0mA to 300mA
Bypass Mode
0mA to 500mA
Junction Temperature (T
J) Range
−30˚C to +125˚C
Ambient Temperature (T
A) Range
(Note 5)
−30˚C to +85˚C
Thermal Properties
Junction-to-Ambient Thermal
100˚C/W
Resistance (
θ
JA), TLP10 Package (Note 6)
Electrical Characteristics (Notes 2, 7) Limits in standard typeface are for T
A =TJ = 25˚C. Limits in bold-
face type apply over the full operating ambient temperature range (−30˚C
≤ T
A =TJ
≤ +85˚C). Unless otherwise noted, speci-
fications apply to the LM3204 with: PV
IN =VDD = EN = 3.6V, BYP = 0V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IN
Input Voltage Range
(Note 8)
PV
IN =VDD =VIN
2.7
5.5
V
V
FB, MIN
Feedback Voltage at
Minimum Setting
V
CON = 0.267V, VIN = 3.6V
0.75
0.800
0.85
V
V
FB, MAX
Feedback Voltage at
Maximum Setting
V
CON = 1.20V, VIN = 4.2V
3.528
3.600
3.672
V
OVP
Over-Voltage
Protection Threshold
(Note 9)
330
400
mV
V
BYPASS−
Auto Bypass Detection
Negative Threshold
(Note 10)
160
250
320
mV
V
BYPASS+
Auto Bypass Detection
Positive Threshold
(Note 10)
350
450
540
mV
I
SHDN
Shutdown Supply
Current (Note 11)
EN = SW = BYPOUT = V
CON =FB=0V
0.1
3
µA
I
Q_PWM
DC Bias Current into
V
DD
V
CON = 0.267V, FB = 2V, BYPOUT = 0V,
No-Load
720
800
µA
I
Q_BYP
BYP = 3.6V, V
CON = 0.5V, No-Load
720
800
µA
R
DSON (P)
Pin-Pin Resistance for
PFET
I
SW = 500mA
320
450
m
Ω
R
DSON (N)
Pin-Pin Resistance for
N-FET
I
SW = - 200mA
310
450
m
Ω
R
DSON
(BYP)
Pin-Pin Resistance for
Bypass FET
I
BYPOUT = 500mA
85
120
m
Ω
I
LIM-PFET
Switch Current Limit
(Note 12)
700
820
940
mA
I
LIM-BYP
Bypass FET Current
Limit
(Note 13)
800
1000
1200
mA
F
OSC
Internal Oscillator
Frequency
1.7
2
2.2
MHz
V
IH
Logic High Input
Threshold for EN, BYP
1.20
V
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