2SC6065

No.8561-1/4

Features

•

High breakdown voltage.

•

High-speed switching.

•

Wide ASO.

•

Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

500

V

Collector-to-Emitter Voltage

VCEO

400

V

Emitter-to-Base Voltage

VEBO

8V

Collector Current

IC

1.5

A

Collector Current (Pulse)

ICP

PW

≤300µs, duty cycle≤10%

3

A

Base Current

IB

0.7

A

Collector Dissipation

PC

0.9

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=400V, IE=0A

10

µA

Emitter Cutoff Current

IEBO

VEB=5V, IC=0A

10

µA

hFE1VCE=5V, IC=0.1A

20

50

DC Current Gain

hFE2VCE=5V, IC=0.7A

10

hFE3VCE=5V, IC=1mA

10

Continued on next page.

Ordering number : EN8561

12006CB MS IM TB-00001637

2SC6065

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Triple Diffused Planar Silicon Transistor

Switching Regulator Applications